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High Performance Gan Light-emitting Diode: a Reliability Study Zonglin Li
High Performance Gan Light-emitting Diode: a Reliability Study
Zonglin Li
The reliability of InGaN/GaN light emitting diodes (LEDs) with different emission wavelengths and different geometries was studied. Device performances, like current-voltage characteristics, 1/f noise spectrum, leakage, static resistance, were measured. The devices underwent a 1000-hr constant-current stress test and their optical output degradation rate was examined. The results were explained by cross-related data.
| Mídia | Livros Paperback Book (Livro de capa flexível e brochura) |
| Lançado | 17 de maio de 2011 |
| ISBN13 | 9783844395297 |
| Editoras | LAP LAMBERT Academic Publishing |
| Páginas | 80 |
| Dimensões | 150 × 5 × 226 mm · 137 g |
| Idioma | Alemão |
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