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Subthreshold Surface Potential Model for Short-channel Mosfet: Using Pseudo 2d Analysis Angsuman Sarkar
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Subthreshold Surface Potential Model for Short-channel Mosfet: Using Pseudo 2d Analysis
Angsuman Sarkar
As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET.
| Mídia | Livros Paperback Book (Livro de capa flexível e brochura) |
| Lançado | 27 de fevereiro de 2014 |
| ISBN13 | 9783659126093 |
| Editoras | LAP LAMBERT Academic Publishing |
| Páginas | 84 |
| Dimensões | 150 × 5 × 226 mm · 143 g |
| Idioma | Alemão |
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