Growth and Characterization of Al (1-x)in (X)n Films Andnanostructures: Nitrides, Epitaxy, Selfassembly and Optoelectronics

The book contains experimental information ofpseudo-epitaxial growth a series of Al(1-x) In(x) N films with thicknesses ranging from 100 nm to 8000 nmand In concentration (x) ranging from 0 to 1 ondifferent substrates (Si, Sapphire, SiC glass) usingPlasma Source Molecular Beam Epitaxy (PSMBE) techniques. Using different growth modes as thespecific film morphology, the self-assemblednanostructures were created. The mechanism of carrierconfinement in these structures are described. Theoretically and experimentally shown that theelectron localization may exist in the nanostructuresby piezoelectric field from AlN buffer layer. Optical investigation of the fundamental bandgap Egof InxAl1-xN in the temperature range 70-700K andcompositional range (0