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GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model - Woodhead Publishing Series in Electronic and Optical Materials
Chauhan, Yogesh Singh (Chair Professor, Department of Electrical Engineering, Indian Institute of Technology Kanpur, India)
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GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model - Woodhead Publishing Series in Electronic and Optical Materials
Chauhan, Yogesh Singh (Chair Professor, Department of Electrical Engineering, Indian Institute of Technology Kanpur, India)
425 pages, 200 illustrations (150 in full color); Illustrations, unspecified
| Mídia | Livros Paperback Book (Livro de capa flexível e brochura) |
| Lançado | 22 de maio de 2024 |
| ISBN13 | 9780323998710 |
| Editoras | Elsevier Science Publishing Co Inc |
| Páginas | 260 |
| Dimensões | 230 × 152 × 18 mm · 426 g |
| Idioma | English |
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